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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
FIG. 13 SDRAM READ INTERRUPTED BY PRECHARGE COMMAND & READ  
BURST STOP @ BURST LENGTH = FULL PAGE  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
SDCK  
SDCE  
SDRAS#  
SDCAS#  
ADDR  
RAa  
CAa  
CAb  
BA0, 1  
[A12,A13  
]
RAa  
SDA10  
Note 2  
1
1
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5  
QAa0 QAa1  
QAa3 QAa4  
QAa2  
CL=2  
CL=3  
DQ  
2
2
QAa0 QAa1 QAa2 QAa3 QAa4  
QAb0 QAb1 QAb2 QAb3 QAb4 QAb5  
SDWE#  
BWE#  
Read  
(A-Bank)  
Precharge  
(A-Bank)  
Read  
(A-Bank)  
Row Active  
(A-Bank)  
Burst Stop  
DON’T CARE  
NOTES:  
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.  
2. About the valid DQs after burst stop, it is the same as the case of SDRAS# interrupt. Both cases are illustrated in the above timing diagram. See the label 1, 2 on each  
of them. But at burst write, burst stop and SDRAS# interrupt should be compared carefully. Refer to the timing diagram of “Full page write burst stop cycle”.  
3. Burst stop is valid at every burst length.  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
22  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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