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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
FIG. 12 SDRAM READ & WRITE CYCLE WITH AUTO PRECHARGE @  
BURST LENGTH = 4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
SDCK  
SDCE#  
SDRAS#  
SDCAS#  
ADDR  
BA0, 1  
Ra  
Rb  
Ca  
Cb  
[A12,A13  
]
Ra  
Rb  
SDA10  
CL=2  
Qa0  
Db0  
Db0  
Db1 Db2  
Db3  
Qa1 Qa2 Qa3  
DQ  
CL=3  
Qa0 Qa1  
Qa3  
Db1  
Db2  
Db3  
Qa2  
SDWE#  
BWE#  
Row Active  
(A-Bank)  
Auto Precharge  
Start Point  
(B-Bank)  
Write with  
Auto Precharge  
(B-Bank)  
Read with  
Auto Precharge  
(A-Bank)  
Auto Precharge  
Start Point  
(A-Bank)  
Row Active  
(B-Bank)  
DON’T CARE  
NOTES:  
1. tCDL should be controlled to meet minimum tRAS before internal precharge start.  
(In the case of Burst Length = 1 & 2 and BRSW mode)  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
21  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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