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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
FIG. 14 SDRAM WRITE INTERRUPTED BY PRECHARGE COMMAND &  
WRITE BURST STOP @ BURST LENGTH = FULL PAGE  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
SDCK  
SDCE#  
SDRAS#  
SDCAS#  
ADDR  
RAa  
CAa  
CAb  
BA0, 1  
[A12,A13  
]
RAa  
SDA10  
DQ  
tBDL  
tRDL  
Note 2  
DAa0 DAa1 DAa2 DAa3 DAa4  
DAb0 DAb1 DAb2 DAb3 DAB4 DAb5  
SDWE#  
BWE#  
Write  
(A-Bank)  
Row Active  
(A-Bank)  
Burst Stop  
Precharge  
(A-Bank)  
Write  
(A-Bank)  
DON’T CARE  
NOTES:  
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.  
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL. BWE# at write interrupt by  
precharge command is needed to prevent invalid write.BWE# should mask invalid input data on precharge command cycle when asserting precharge before end of  
burst. Input data after Row precharge cycle will be masked internally.  
3. Burst stop is valid at every burst length.  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
23  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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