欢迎访问ic37.com |
会员登录 免费注册
发布采购

WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
 浏览型号WED9LC6816V1312BI的Datasheet PDF文件第15页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第16页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第17页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第18页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第20页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第21页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第22页浏览型号WED9LC6816V1312BI的Datasheet PDF文件第23页  
WED9LC6816V  
White Electronic Designs  
FIG. 10 SDRAM PAGE WRITE CYCLE AT DIFFERENT BANK @  
BURST LENGTH = 4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
SDCK  
SDCE#  
SDRAS#  
Note 2  
SDCAS#  
ADDR  
RAa  
CAa RBb  
CBb  
CAc  
CBb  
BA0, 1  
[A12,A13  
]
SDA10  
DQ  
RAa  
RBb  
tCDL  
tRDL  
DAa3  
DBb1 DBb2 DBb3 DAc0 DAc1  
DBd1  
DAa0 DAa1 DAa2  
DBb0  
DBd0  
SDWE#  
BWE#  
Note 1  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
Row Active  
(A-Bank)  
Write  
(B-Bank)  
Precharge  
(Both Banks)  
Write  
(B-Bank)  
Write  
(A-Bank)  
DON’T CARE  
NOTES:  
1. To interrupt burst write by Row precharge, BWE# should be asserted to mask invalid input data.  
2. To interrupt a burst read by Row precharge, both the read and the precharge banks must be the same.  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
19  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
 复制成功!