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WED9LC6816V1312BI 参数 Datasheet PDF下载

WED9LC6816V1312BI图片预览
型号: WED9LC6816V1312BI
PDF下载: 下载PDF文件 查看货源
内容描述: 256Kx32 SSRAM / SDRAM 4Mx32 [256Kx32 SSRAM/4Mx32 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 27 页 / 1138 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LC6816V  
White Electronic Designs  
FIG. 15 SDRAM BURST READ SINGLE BIT WRITE CYCLE @  
BURST LENGTH = 2  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
SDCK  
SDCE#  
SDRAS#  
SDCAS#  
ADDR  
RAa  
CAa  
RBb CAb  
RAc  
CBc  
CAd  
BA0, 1  
]
[A12,A13  
RAa  
RBb  
RAc  
SDA10  
CL=2  
DAa0  
DAa0  
QAb0  
DBc0  
DBc0  
QAd1  
QAb1  
QAd0  
DQ  
CL=3  
QAd0 QAd1  
QAa1 QAb1  
SDWE#  
BWE#  
Row Active  
(A-Bank)  
Precharge  
(Both Banks)  
Row Active  
(A-Bank)  
Read  
(A-Bank)  
Write with  
Auto Precharge  
(B-Bank)  
Row Active  
(B-Bank)  
Read with  
Write  
Auto Precharge  
(A-Bank)  
(A-Bank)  
DON’T CARE  
NOTES:  
1. BRSW modes enabled by setting A9 “High” at MRS (Mode Register Set).  
At the BRSW Mode, the burst length at Write is fixed to “1” regardless of programmed burst length.  
2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the burst-end cycle, so in  
the case of BRSW write command, the next cycle starts the precharge.  
Contact factory for ordering information.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
September, 2003  
Rev. 1  
24  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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