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WED3DL644V 参数 Datasheet PDF下载

WED3DL644V图片预览
型号: WED3DL644V
PDF下载: 下载PDF文件 查看货源
内容描述: SDRAM 4Mx64 [4Mx64 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 28 页 / 919 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3DL644V  
White Electronic Designs  
FIG. 13 WRITE INTERRUPTED BY PRECHARGE COMMAND & WRITE BURST STOP CYCLE  
@BURST LENGTH=FULL PAGE  
0
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10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
HIGH  
CKE  
CE#  
RAS#  
CAS#  
ADDR  
RAa  
CAa  
CAb  
BA  
A10/AP  
DQ  
RAa  
tBDL  
tRDL  
Note 2  
DAa0 DAa1 DAa2 DAa3 DAa4  
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5  
WE#  
DQM  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
Burst Stop  
Write  
(A-Bank)  
Precharge  
(A-Bank)  
DON'T CARE  
NOTES:  
1.  
2.  
At full page mode, burst is end at the end of burst. So auto precharge is possible.  
Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell. It is defined by AC parameter of tRDL  
.
DQM at write interrupted by precharge command is needed to prevent invalid write.  
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle  
will be masked internally.  
3.  
Burst stop is valid at every burst length.  
August 2005  
Rev. 6  
22  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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