WED3DL644V
White Electronic Designs
FIG. 13 WRITE INTERRUPTED BY PRECHARGE COMMAND & WRITE BURST STOP CYCLE
@BURST LENGTH=FULL PAGE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
CLOCK
HIGH
CKE
CE#
RAS#
CAS#
ADDR
RAa
CAa
CAb
BA
A10/AP
DQ
RAa
tBDL
tRDL
Note 2
DAa0 DAa1 DAa2 DAa3 DAa4
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
WE#
DQM
Row Active
(A-Bank)
Write
(A-Bank)
Burst Stop
Write
(A-Bank)
Precharge
(A-Bank)
DON'T CARE
NOTES:
1.
2.
At full page mode, burst is end at the end of burst. So auto precharge is possible.
Data-in at the cycle of interrupted by precharge cannot be written into the corresponding memory cell. It is defined by AC parameter of tRDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle
will be masked internally.
3.
Burst stop is valid at every burst length.
August 2005
Rev. 6
22
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