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WED3DL644V 参数 Datasheet PDF下载

WED3DL644V图片预览
型号: WED3DL644V
PDF下载: 下载PDF文件 查看货源
内容描述: SDRAM 4Mx64 [4Mx64 SDRAM]
分类和应用: 动态存储器
文件页数/大小: 28 页 / 919 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3DL644V  
White Electronic Designs  
FIG. 14 BURST READ SINGLE BIT WRITE CYCLE @BURST LENGTH=2 @BURST  
LENGTH=FULL PAGE  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
CLOCK  
Note 1  
HIGH  
CKE  
CE#  
RAS#  
Note 2  
CAS#  
ADDR  
RAa  
CAa  
RBb  
CAb  
RAc  
CAd  
CBc  
BA  
RAa  
A10/AP  
RBb  
RAc  
CL = 2  
DQ  
DAa0  
DAa0  
QAb0 QAb1  
DBc0  
DBc0  
QAd0 QAd1  
CL = 3  
QAb0 QAb1  
QAd0 QAd1  
WE#  
DQM  
Row Active  
(A-Bank)  
Row Active  
(B-Bank)  
Row Active  
(A-Bank)  
Read  
(A-Bank)  
Precharge  
(Both Banks)  
Write  
Read with  
Write with  
Auto Precharge  
(B-Bank)  
(A-Bank) Auto Precharge  
(A-Bank)  
DON'T CARE  
NOTES:  
1.  
BRSW mode is enabled by setting A9 “High” at MRS (Mode Register Set). At the BRSW Mode, the burst length at write is fixed to “1” regardless of  
programmed burst length.  
2.  
When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the burst-end  
cycle, so in the case of BRSW write command, the next cycle starts the precharge.  
August 2005  
Rev. 6  
23  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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