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UCC21759QDWRQ1 参数 Datasheet PDF下载

UCC21759QDWRQ1图片预览
型号: UCC21759QDWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 3.0kVrms、±10A 单通道隔离式栅极驱动器 | DW | 16 | -40 to 150]
分类和应用: 栅极驱动双极性晶体管驱动器
文件页数/大小: 57 页 / 2481 K
品牌: TI [ TEXAS INSTRUMENTS ]
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UCC21759-Q1  
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020  
www.ti.com  
ROH_EFF  
2 ROH_EFF + RON + RG _Int ROL +ROFF +RG _Int  
ROL  
1
P
=
(  
+
)(VDD - VEE)fsw Qg = 0.505W  
SW  
(6)  
Thus, the total power loss is:  
P =P +P = 0.10W +0.505W = 0.605W  
DR  
Q
SW  
(7)  
When the board temperature is 125°C, the junction temperature can be estimated as:  
Tj = T + yjb P ö 150oC  
b
DR  
(8)  
Therefore, for the application in this example, with 125°C board temperature, the maximum switching frequency  
is ~50kHz to keep the gate driver in the thermal limit. By using a lower switching frequency, or increasing  
external gate resistance, the gate driver can be operated at a higher switching frequency.  
9.2.2.6 Desaturation (DESAT) Protection  
A standard desaturation circuit can be applied to the DESAT pin. If the voltage of the DESAT pin is higher than  
the threshold VDESAT, the soft turn-off is initiated. A fault will be reported to the input side to DSP/MCU. The  
output is held to LOW after the fault is detected, and can only be reset by the RST/EN pin. The state-of-art  
overcurrent and short circuit detection time helps to ensure a short shutdown time for SiC MOSFET and IGBT.  
If DESAT pin is not in use, it must be tied to COM to avoid overcurrent fault false triggering.  
Fast reverse recovery high voltage diode is recommended in the desaturation circuit. A resistor is  
recommended in series with the high voltage diode to limit the inrush current. Multiple high voltage diodes  
can be placed in series to reduce the DESAT detection voltage as seen by the IGBT or SiC MOSFET based  
on the forward voltage drop.  
A Schottky diode is recommended from COM to DESAT to prevent driver damage caused by negative  
voltage.  
A Zener diode is recommended from COM to DESAT to prevent driver damage caused by positive voltage.  
9.2.2.7 Isolated Analog Signal Sensing  
The isolated analog signal sensing feature provides a simple isolated channel for the isolated temperature  
detection, voltage sensing and etc. One typical application of this function is the temperature monitor of the  
power semiconductor. Thermal diodes or temperature sensing resistors are integrated in the SiC MOSFET or  
IGBT module close to the dies to monitor the junction temperature. UCC21759-Q1 has an internal 200uA current  
source with ±3% accuracy across temperature, which can forward bias the thermal diodes or create a voltage  
drop on the temperature sensing resistors. The sensed voltage from the AIN pin is passed through the isolation  
barrier to the input side and transformed to a PWM signal. The duty cycle of the PWM changes linearly from  
10% to 88% when the AIN voltage changes from 4.5V to 0.6V and can be represented using Equation 9.  
DAPWM(%) = -20 * VAIN +100  
(9)  
9.2.2.7.1 Isolated Temperature Sensing  
A typical application circuit is shown in Figure 9-7. To sense temperature, the AIN pin is connected to the thermal  
diode or thermistor which can be discrete or integrated within the power module. A low pass filter is  
recommended for the AIN input. Since the temperature signal does not have a high bandwidth, the low pass  
filter is mainly used for filtering the noise introduced by the switching of the power device, which does not require  
stringent control for propagation delay. The filter capacitance for Cfilt can be chosen between 1nF to 100nF and  
the filter resistance Rfilt between 1Ω to 10Ω according to the noise level.  
The output of APWM is directly connected to the microcontroller to measure the duty cycle dependent on the  
voltage input at AIN, using Equation 9.  
Copyright © 2020 Texas Instruments Incorporated  
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