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UCC21759QDWRQ1 参数 Datasheet PDF下载

UCC21759QDWRQ1图片预览
型号: UCC21759QDWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 3.0kVrms、±10A 单通道隔离式栅极驱动器 | DW | 16 | -40 to 150]
分类和应用: 栅极驱动双极性晶体管驱动器
文件页数/大小: 57 页 / 2481 K
品牌: TI [ TEXAS INSTRUMENTS ]
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UCC21759-Q1  
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020  
www.ti.com  
LDC  
Lc1  
Lstray=LDC+Le1+Lc1+Le1+Lc1  
RG  
Lload  
t
+
Le1  
+
VDC  
t
Lc2  
VDD  
Cgc  
Cies=Cgc+Cge  
RG  
OUTH  
OUTL  
COM  
Cge  
Le2  
Figure 9-6. Stray Parasitic Inductance of IGBTs in a Half-Bridge Configuration  
The power dissipation should be taken into account to maintain the gate driver within the thermal limit. The  
power loss of the gate driver includes the quiescent loss and the switching loss, which can be calculated as:  
P
= PQ +P  
DR  
SW  
(4)  
PQ is the quiescent power loss for the driver, which is Iq x (VDD-VEE) = 5mA x 20V = 0.100W. The quiescent  
power loss is the power consumed by the internal circuits such as the input stage, reference voltage, logic  
circuits, protection circuits when the driver is swithing when the driver is biased with VDD and VEE, and also the  
charging and discharing current of the internal circuit when the driver is switching. The power dissipation when  
the driver is switching can be calculated as:  
ROH_EFF  
2 ROH_EFF +RON +RG _Int ROL +ROFF +RG _Int  
ROL  
1
P
=
(  
+
)(VDD - VEE)fsw Qg  
SW  
(5)  
Where  
Qg is the gate charge required at the operation point to fully charge the gate voltage from VEE to VDD  
fsw is the switching frequency  
In this example, the PSW can be calculated as:  
Copyright © 2020 Texas Instruments Incorporated  
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