DRV8301-Q1
SLOS842 –SEPTEMBER 2013
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MAX UNIT
ELECTRICAL CHARACTERISTICS (continued)
PVDD = 6 V to 60 V, TC = 25°C, unless specified under test condition
PARAMETER
TEST CONDITIONS
MIN
TYP
GATE DRIVE OUTPUT: GH_A, GH_B, GH_C, GL_A, GL_B, GL_C
PVDD = 8V–60V, Igate = 30mA,
CCP = 22nF
9.5
9.5
8.8
8.3
11.5
V
VGX_NORM Gate driver Vgs voltage
PVDD = 8V–60V, Igate = 30mA,
CCP = 220nF
11.5
PVDD = 6V–8V, Igate = 15mA,
CCP = 22nF
VGX_MIN
Gate driver Vgs voltage
V
PVDD = 6V–8V, Igate = 30mA,
CCP = 220nF
Ioso1
Iosi1
Ioso2
Iosi2
Ioso3
Iosi3
Maximum source current setting 1, peak
Maximum sink current setting 1, peak
Source current setting 2, peak
Sink current setting 2, peak
Vgs of FET equals to 2 V. REG 0x02
Vgs of FET equals to 8 V. REG 0x02
Vgs of FET equals to 2 V. REG 0x02
Vgs of FET equals to 8 V. REG 0x02
Vgs of FET equals to 2 V. REG 0x02
Vgs of FET equals to 8 V. REG 0x02
1.7
2.3
0.7
1
A
A
A
A
A
A
Source current setting 3, peak
Sink current setting 3, peak
0.25
0.5
Gate output impedence during standby mode
when EN_GATE low (pins GH_x, GL_x)
Rgate_off
1.6
2.4
50
kΩ
SUPPLY CURRENTS
IPVDD1_STB PVDD1 supply current, standby
EN_GATE is low. PVDD1 = 8V.
20
15
5
µA
mA
mA
EN_GATE is high, no load on gate drive
output, switching at 10 kHz,
100 nC gate charge
IPVDD1_OP PVDD1 supply current, operating
IPVDD1_HIZ PVDD1 Supply current, HiZ
EN_GATE is high, gate not switching
2
10
INTERNAL REGULATOR VOLTAGE
PVDD = 8V - 60V
PVDD = 6V - 60V
6
5.5
3
6.5
3.3
7
6
AVDD
DVDD
AVDD voltage
DVDD voltage
V
V
3.6
VOLTAGE PROTECTION
PVDD falling
PVDD rising
GVDD falling
5.9
6
VPVDD_UV
Under voltage protection limit, PVDD
V
VGVDD_UV Under voltage protection limit, GVDD
VGVDD_OV Over voltage protection limit, GVDD
CURRENT PROTECTION, (VDS SENSING)
7.5
V
V
16
PVDD = 8V - 60V
PVDD = 6V - 8V(1)
0.125
0.125
2.4
VDS_OC
Drain-source voltage protection limit
OC sensing response time
V
1.491
Toc
1.5
64
µs
µs
OCTW pin reporting pulse stretch length for OC
event
TOC_PULSE
(1) Reduced AVDD voltage range results in limitations on settings for over current protection. See Table 10.
8
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