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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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ST10F276E  
Electrical characteristics  
Figure 54. Crystal oscillator and resonator connection diagram  
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Table 99. Negative resistance (absolute min. value @125oC / VDD = 4.5V)  
CA (pF)  
12  
15  
18  
22  
27  
33  
39  
47  
4 MHz  
8 MHz  
12 MHz  
460 Ω  
380 Ω  
370 Ω  
550 Ω  
460 Ω  
420 Ω  
675 Ω  
540 Ω  
360 Ω  
800 Ω  
640 Ω  
-
840 Ω  
580 Ω  
-
1000 Ω  
1180 Ω  
1200 Ω  
-
-
-
-
-
-
The given values of CA do not include the stray capacitance of the package and of the  
printed circuit board: The negative resistance values are calculated assuming additional 5pF  
to the values in the table. The crystal shunt capacitance (C0), the package and the stray  
capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF.  
The external resistance between XTAL1 and XTAL2 is not necessary, since already present  
on the silicon.  
23.8.14 32 kHz oscillator specifications  
Conditions: VDD = 5V 10%, TA = -40 / +125°C  
Table 100. 32 kHz Oscillator specifications  
Value  
Typ.  
Symbol  
Parameter  
Conditions  
Unit  
Min.  
Max.  
Start-up  
20  
8
31  
17  
1.0  
0.9  
1
50  
30  
2.4  
1.2  
5
gm32  
Oscillator(1)  
µA/V  
Normal run  
VOSC32  
VAV32  
Oscillation amplitude(2))  
Oscillation-voltage level(2)  
Oscillator start-up time(2)  
Peak to peak  
Sine wave middle  
Stable VDD  
0.5  
0.7  
-
V
s
tSTUP32  
1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started,  
the current biasing is reduced to lower the power consumption of the system.  
Doc ID 12303 Rev 3  
205/235  
 
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