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K4J55323QG-BC14 参数 Datasheet PDF下载

K4J55323QG-BC14图片预览
型号: K4J55323QG-BC14
PDF下载: 下载PDF文件 查看货源
内容描述: 的256Mbit GDDR3 SDRAM [256Mbit GDDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 53 页 / 1359 K
品牌: SAMSUNG [ SAMSUNG ]
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256M GDDR3 SDRAM  
K4J55323QG  
7.8 Mirror Function  
The GDDR3 SDRAM provides a mirror function (MF) ball to change the physical location of the control lines and all address lines  
which helps to route devices back to back. The MF ball will affect RAS, CAS, WE, CS and CKE on balls H3, F4, H9, F9 and H4  
respectively and A0, A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11, BA0 and BA1 on balls K4, H2, K3, M4, K9, H11, K10, L9, K11, M9,  
K2, L4, G4 and G9 respectively and only detects a DC input. The MF ball should be tied directly to VSS or VDD depending on the control  
line orientation desired. When the MF ball is tied low the ball orientation is as follows, RAS - H3, CAS - F4, WE - H9, CS - F9, CKE -  
H4, A0 - K4, A1 - H2, A2 - K3, A3 - M4, A4 - K9, A5 - H11, A6 - K10, A7 - L9, A8 - K11, A9 - M9, A10 - K2, A11 - L4, BA0 - G4 and  
BA1 - G9. The high condition on the MF ball will change the location of the control balls as follows; CS - F4, CAS - F9, RAS - H10, WE  
- H4, CKE - H9, A0 - K9, A1 - H11, A2 - K10, A3 - M9, A4 - K4, A5 - H2, A6 - K3, A7 - L4, A8 - K2, A9 - M4, A10 - K11,  
A11 - L9, BA0 - G9 and BA1 - G4.  
Mirror Function Signal Mapping  
MF LOGIC STATE  
PIN  
HIGH  
H10  
F9  
H4  
F4  
LOW  
H3  
F4  
H9  
F9  
RAS  
CAS  
WE  
CS  
CKE  
A0  
H9  
K9  
H4  
K4  
A1  
A2  
A3  
A4  
H11  
K10  
M9  
K4  
H2  
K3  
M4  
K9  
A5  
A6  
A7  
H2  
K3  
L4  
H11  
K10  
L9  
A8  
A9  
A10  
A11  
BA0  
BA1  
K2  
K11  
M9  
K2  
L4  
G4  
G9  
M4  
K11  
L9  
G9  
G4  
22 of 53  
Rev. 1.1 November 2005  
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