256M GDDR3 SDRAM
K4J55323QG
SCAN DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
PARAMETER/CONDITON
Input High (Logic 1) Voltage
SYMBOL
VIH(DC)
MIN
VREF+0.15
MAX
-
UNITS
V
NOTES
1,2
Input Low (Logic 0) Voltage
VIL(DC)
-
VREF-0.15
V
1,2
*Note : 1. The parameter applies only when SEN is asserted.
2. All voltages referenced to GND.
Figure 2. Scan Capture Timing
Not a true clock, but a single pulse or series of pulses
SCK
SEN
tSES
LOW
SSH
tSCS
SOE
tSDS tSDS
VALID
Pins
under Test
DON’T CARE
Figure 3.Scan Shift Timing
SCK
SEN
SSH
SOE
tSES
tSCS
tSCS
Scan Out
bit 0
Scan Out
bit 1
Scan Out
bit 2
Scan Out
bit 3
SOUT
tSAC
tSOH
TRANSITIONING DATA
20 of 53
Rev. 1.1 November 2005
SAMSUNG [ SAMSUNG ]
