Rev. 1.01
K4B2G0446D
K4B2G0846D
datasheet
DDR3L SDRAM
[ Table 52 ] Derating values DDR3-800/1066/1333/1600 tIS/tIH-AC/DC based - Alternate AC150 Threshold
∆tIS, ∆tIH Derating [ps] AC/DC based
Alternate AC150 Threshold -> VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV
CLK,CLK Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
∆tIS
1.0V/ns
∆tIS
∆tIH
50
∆tIS
∆tIH
50
∆tIS
∆tIH
50
∆tIS
∆tIH
58
42
8
∆tIS
∆tIH
66
50
16
12
6
∆tIS
∆tIH
74
58
24
20
14
8
∆tIH
84
68
34
30
24
18
8
∆tIS
∆tIH
100
84
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
75
50
0
75
50
0
75
50
0
83
58
8
91
66
16
16
16
16
15
6
99
74
24
24
24
24
23
14
-1
107
82
32
32
32
32
31
22
7
115
90
40
40
40
40
39
30
15
34
34
34
0
0
0
50
CMD/
ADD
Slew
rate
0
-4
0
-4
0
-4
8
4
46
0
-10
-16
-26
-40
-60
0
-10
-16
-26
-40
-60
0
-10
-16
-26
-40
-60
8
-2
40
0
0
0
8
-8
0
34
V/ns
-1
-10
-25
-1
-10
-25
-1
-10
-25
7
-18
-32
-52
-10
-24
-44
-2
24
-2
-17
-16
-36
-6
10
-9
-26
-10
[ Table 53 ] Required time tVAC above VIH(AC) {blow VIL(AC)} for valid transition
tVAC @175mV [ps]
Slew Rate[V/ns]
tVAC @150mV [ps]
min
75
57
50
38
34
29
22
13
0
max
min
175
170
167
163
162
161
159
155
150
150
max
>2.0
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.0
0.9
0.8
0.7
0.6
0.5
< 0.5
0
- 54 -
SAMSUNG [ SAMSUNG ]
