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K4B2G0846D-HYH9 参数 Datasheet PDF下载

K4B2G0846D-HYH9图片预览
型号: K4B2G0846D-HYH9
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB D-死DDR3L SDRAM [2Gb D-die DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 1744 K
品牌: SAMSUNG [ SAMSUNG ]
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Rev. 1.01  
K4B2G0446D  
K4B2G0846D  
datasheet  
DDR3L SDRAM  
14.1 Jitter Notes  
Specific Note a  
Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under operation. Unit ’nCK’ represents one clock cycle of the  
input clock, counting the actual clock edges.ex) tMRD = 4 [nCK] means; if one Mode Register Set command is registered at Tm,  
another Mode Register Set command may be registered at Tm+4, even if (Tm+4 - Tm) is 4 x tCK(avg) + tERR(4per),min.  
Specific Note b  
These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition  
edge to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.  
tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is,  
these parameters should be met whether clock jitter is present or not.  
Specific Note c  
These parameters are measured from a data strobe signal (DQS(L/U), DQS(L/U)) crossing to its respective clock signal (CK, CK)  
crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative  
to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not.  
Specific Note d  
Specific Note e  
These parameters are measured from a data signal (DM(L/U), DQ(L/U)0, DQ(L/U)1, etc.) transition edge to its respective data  
strobe signal (DQS(L/U), DQS(L/U)) crossing.  
For these parameters, the DDR3 SDRAM device supports tnPARAM [nCK] = RU{ tPARAM [ns] / tCK(avg) [ns] }, which is in clock  
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK(avg)},  
which is in clock cycles, if all input clock jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the  
device will support tnRP = RU{tRP / tCK(avg)} = 6, as long as the input clock jitter specifications are met, i.e. Precharge com-  
mand at Tm and Active command at Tm+6 is valid even if (Tm+6 - Tm) is less than 15ns due to input clock jitter.  
Specific Note f  
When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(mper),act of the input  
clock, where 2 <= m <= 12. (output deratings are relative to the SDRAM input clock.)  
For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = - 172 ps and tERR(mper),act,max = +  
193 ps, then tDQSCK,min(derated) = tDQSCK,min - tERR(mper),act,max = - 400 ps - 193 ps = - 593 ps and tDQSCK,max(der-  
ated) = tDQSCK,max - tERR(mper),act,min = 400 ps + 172 ps = + 572 ps. Similarly, tLZ(DQ) for DDR3-800 derates to  
tLZ(DQ),min(derated) = - 800 ps - 193 ps = - 993 ps and tLZ(DQ),max(derated) = 400 ps + 172 ps = + 572 ps. (Caution on the  
min/max usage!)  
Note that tERR(mper),act,min is the minimum measured value of tERR(nper) where 2 <= n <=  
12, and tERR(mper),act,max is the maximum measured value of tERR(nper) where 2 <= n <= 12.  
Specific Note g  
When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per),act of the input  
clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR3-800 SDRAM has  
tCK(avg),act = 2500 ps, tJIT(per),act,min = - 72 ps and tJIT(per),act,max = + 93 ps, then tRPRE,min(derated) = tRPRE,min +  
tJIT(per),act,min = 0.9 x tCK(avg),act + tJIT(per),act,min = 0.9 x 2500 ps - 72 ps = + 2178 ps. Similarly, tQH,min(derated) =  
tQH,min + tJIT(per),act,min = 0.38 x tCK(avg),act + tJIT(per),act,min = 0.38 x 2500 ps - 72 ps = + 878 ps. (Caution on the min/  
max usage!)  
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