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K4B2G0846D-HYH9 参数 Datasheet PDF下载

K4B2G0846D-HYH9图片预览
型号: K4B2G0846D-HYH9
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB D-死DDR3L SDRAM [2Gb D-die DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 1744 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第46页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第47页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第48页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第49页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第51页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第52页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第53页浏览型号K4B2G0846D-HYH9的Datasheet PDF文件第54页  
Rev. 1.01  
K4B2G0446D  
K4B2G0846D  
datasheet  
DDR3L SDRAM  
[ Table 49 ] Timing Parameters by Speed Bin (Cont.)  
Speed  
DDR3-800  
DDR3-1066  
DDR3-1333  
DDR3-1600  
Units  
NOTE  
Parameter  
Symbol  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
Reset Timing  
max(5nCK,  
tRFC +  
max(5nCK,  
tRFC +  
max(5nCK,  
tRFC +  
max(5nCK,  
tRFC +  
Exit Reset from CKE HIGH to a valid command  
tXPR  
-
-
-
-
10ns)  
10ns)  
10ns)  
10ns)  
Self Refresh Timing  
max(5nCK,t  
RFC +  
max(5nCK,t  
RFC +  
max(5nCK,t  
RFC +  
Exit Self Refresh to commands not requiring a locked  
DLL  
max(5nCK,t  
RFC + 10ns)  
tXS  
-
-
-
-
10ns)  
10ns)  
10ns)  
Exit Self Refresh to commands requiring a locked DLL  
tXSDLL  
tCKESR  
tDLLK(min)  
-
-
tDLLK(min)  
-
-
tDLLK(min)  
-
-
tDLLK(min)  
-
-
nCK  
Minimum CKE low width for Self refresh entry to exit  
timing  
tCKE(min)+  
1tCK  
tCKE(min)+  
1tCK  
tCKE(min)+  
1tCK  
tCKE(min) +  
1tCK  
Valid Clock Requirement after Self Refresh Entry  
(SRE) or Power-Down Entry (PDE)  
max(5nCK,  
10ns)  
max(5nCK,  
10ns)  
max(5nCK,  
10ns)  
max(5nCK,  
10ns)  
tCKSRE  
tCKSRX  
-
-
-
-
-
-
-
-
Valid Clock Requirement before Self Refresh Exit  
(SRX) or Power-Down Exit (PDX) or Reset Exit  
max(5nCK,  
10ns)  
max(5nCK,  
10ns)  
max(5nCK,  
10ns)  
max(5nCK,  
10ns)  
Power Down Timing  
Exit Power Down with DLL on to any valid com-  
mand;Exit Precharge Power Down with DLL  
frozen to commands not requiring a locked DLL  
max  
max  
max  
max  
tXP  
tXPDLL  
tCKE  
(3nCK,  
7.5ns)  
-
-
-
(3nCK,  
7.5ns)  
-
-
-
-
-
-
-
-
-
(3nCK,6ns)  
(3nCK,6ns)  
max  
(10nCK,  
24ns)  
max  
(10nCK,  
24ns)  
max  
(10nCK,  
24ns)  
max  
(10nCK,  
24ns)  
Exit Precharge Power Down with DLL frozen to com-  
mands requiring a locked DLL  
2
max  
max  
max  
max  
CKE minimum pulse width  
(3nCK,  
7.5ns)  
(3nCK,  
5.625ns)  
(3nCK,  
5.625ns)  
(3nCK,5ns)  
Command pass disable delay  
tCPDED  
tPD  
1
-
1
-
1
-
1
-
nCK  
tCK  
Power Down Entry to Exit Timing  
tCKE(min)  
9*tREFI  
tCKE(min)  
9*tREFI  
tCKE(min)  
9*tREFI  
tCKE(min)  
9*tREFI  
15  
20  
20  
Timing of ACT command to Power Down entry  
Timing of PRE command to Power Down entry  
Timing of RD/RDA command to Power Down entry  
tACTPDEN  
tPRPDEN  
tRDPDEN  
1
1
-
-
-
1
1
-
-
-
1
1
-
-
-
1
1
-
-
-
nCK  
nCK  
RL + 4 +1  
RL + 4 +1  
RL + 4 +1  
RL + 4 +1  
WL + 4  
+(tWR/  
WL + 4  
+(tWR/  
WL + 4  
+(tWR/  
WL + 4  
+(tWR/  
Timing of WR command to Power Down entry  
(BL8OTF, BL8MRS, BC4OTF)  
tWRPDEN  
tWRAPDEN  
tWRPDEN  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nCK  
nCK  
nCK  
nCK  
9
10  
9
tCK(avg))  
tCK(avg))  
tCK(avg))  
tCK(avg))  
Timing of WRA command to Power Down entry  
(BL8OTF, BL8MRS, BC4OTF)  
WL + 4  
WL + 4  
WL + 4  
WL + 4 +WR  
+1  
+WR +1  
+WR +1  
+WR +1  
WL + 2  
+(tWR/  
WL + 2  
+(tWR/  
WL + 2  
+(tWR/  
WL + 2  
+(tWR/  
Timing of WR command to Power Down entry  
(BC4MRS)  
tCK(avg))  
tCK(avg))  
tCK(avg))  
tCK(avg))  
Timing of WRA command to Power Down entry  
(BC4MRS)  
WL +2 +WR  
+1  
WL +2 +WR  
+1  
WL +2 +WR  
+1  
WL +2 +WR  
+1  
tWRAPDEN  
tREFPDEN  
10  
Timing of REF command to Power Down entry  
Timing of MRS command to Power Down entry  
ODT Timing  
1
-
-
1
-
-
1
-
-
1
-
-
20,21  
tMRSPDEN tMOD(min)  
tMOD(min)  
tMOD(min)  
tMOD(min)  
ODT high time without write command or with write  
command and BC4  
ODTH4  
ODTH8  
tAONPD  
4
6
2
-
-
4
6
2
-
-
4
6
2
-
-
4
6
2
-
-
nCK  
nCK  
ns  
ODT high time with Write command and BL8  
Asynchronous RTT turn-on delay (Power-Down with  
DLL frozen)  
8.5  
8.5  
8.5  
8.5  
Asynchronous RTT turn-off delay (Power-Down with  
DLL frozen)  
tAOFPD  
tAON  
2
8.5  
400  
0.7  
0.7  
2
8.5  
300  
0.7  
0.7  
2
8.5  
250  
0.7  
0.7  
2
8.5  
225  
0.7  
0.7  
ns  
RTT turn-on  
-400  
0.3  
0.3  
-300  
0.3  
0.3  
-250  
0.3  
0.3  
-225  
0.3  
0.3  
ps  
7,f  
8,f  
f
RTT_NOM and RTT_WR turn-off time from ODTLoff  
reference  
tAOF  
tCK(avg)  
tCK(avg)  
RTT dynamic change skew  
tADC  
Write Leveling Timing  
First DQS pulse rising edge after tDQSS margining  
mode is programmed  
tWLMRD  
tWLDQSEN  
tWLH  
40  
25  
-
-
-
-
40  
25  
-
-
-
-
40  
25  
-
-
-
-
40  
25  
-
-
-
-
tCK  
tCK  
ps  
3
3
DQS/DQS delay after tDQS margining mode is pro-  
grammed  
Write leveling setup time from rising CK, CK crossing  
to rising DQS, DQS crossing  
325  
325  
245  
245  
195  
195  
165  
165  
Write leveling hold time from rising DQS, DQS cross-  
ing to rising CK, CK crossing  
tWLH  
ps  
Write leveling output delay  
Write leveling output error  
tWLO  
0
0
9
2
0
0
9
2
0
0
9
2
0
0
7.5  
2
ns  
ns  
tWLOE  
- 50 -  
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