Nexperia
PXP400-100QS
100 V, P-channel Trench MOSFET
aaa-031143
aaa-031144
-3
-4
-5
-6
-5
-10
-10 V
-5.0 V
-4.5 V
I
D
(A)
I
D
(A)
-4
-3
-2
-1
0
-10
V
= -4.0 V
GS
min
typ
max
-10
-10
0
-2
-4
-6
-8
-10
(V)
0
-1
-2
-3
-4
-5
V
V
(V)
GS
DS
Tj = 25 °C
VDS = -5 V; Tj = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-031145
aaa-031146
2000
2000
-4.0 V
-4.5 V
R
DSon
R
DSon
1500
1500
1000
500
0
1000
500
0
T = 150 °C
j
-5.0 V
V
= -10 V
T = 25 °C
j
GS
-4
0
-1
-2
-3
-5
0
-2
-4
-6
-8
-10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = -1.4 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PXP400-100QS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 May 2020
7 / 14
NEXPERIA [ Nexperia ]
