Nexperia
PXP400-100QS
100 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-100
-2
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-3
-4
IDSS
IGSS
drain leakage current
gate leakage current
VGS = 0 V; VDS = -100 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -1.4 A; Tj = 25 °C
VGS = -10 V; ID = -1.4 A; Tj = 150 °C
VGS = -6 V; ID = -1.1 A; Tj = 25 °C
VDS = -10 V; ID = -1.4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-1
µA
nA
nA
mΩ
mΩ
mΩ
S
-
-100
100
400
844
600
-
-
RDSon
drain-source on-state
resistance
275
580
290
3.9
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
-
12
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
VDS = -50 V; ID = -1.4 A; VGS = -10 V;
Tj = 25 °C
10.1
15.2
nC
VDS = -50 V; ID = -1.1 A; VGS = -6 V;
Tj = 25 °C
-
-
-
-
-
-
6.4
1.9
2.6
544
25
9.6
nC
nC
nC
pF
pF
pF
QGS
QGD
Ciss
Coss
Crss
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = -50 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
reverse transfer
capacitance
15
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -50 V; ID = -1.1 A; VGS = -4.5 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
12
36
9
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
14
Source-drain diode
VSD
trr
source-drain voltage
IS = -1.4 A; VGS = 0 V; Tj = 25 °C
-
-
-
-0.8
27
-1.2
V
reverse recovery time IS = -1.4 A; dIS/dt = -100 A/µs;
-
-
ns
nC
VGS = -4.5 V; VDS = -40 V; Tj = 25 °C
Qr
recovered charge
32
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PXP400-100QS
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Nexperia B.V. 2020. All rights reserved
Product data sheet
7 May 2020
6 / 14
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