Nexperia
PXP400-100QS
100 V, P-channel Trench MOSFET
aaa-031147
aaa-031148
-30
2.5
2.0
1.5
1.0
0.5
0
a
I
D
(A)
-20
-10
T = 150 °C
j
T = 25 °C
j
0
0
-1
-2
-3
-4
-5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = -10 V
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-031149
aaa-031150
3
-5
10
C
iss
V
GS(th)
(V)
C
(pF)
-4
max
typ
2
10
-3
-2
-1
0
C
oss
min
10
C
rss
1
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = 250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PXP400-100QS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 May 2020
8 / 14
NEXPERIA [ Nexperia ]
