Nexperia
PXP400-100QS
100 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-100
20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
V
ID
VGS = -10 V; Tamb = 25 °C
VGS = -10 V; Tamb = 100 °C
VGS = -10 V; Tsp = 25 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-1.4
-0.9
-3.5
-6
A
-
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[1]
-
1.7
W
W
°C
°C
°C
Tsp = 25 °C
-
10.4
150
150
150
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
-
-1.4
28
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
Tj(init) = 25 °C; ID = -0.58 A; DUT in
mJ
source avalanche energy avalanche (unclamped)
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-030137
aaa-030138
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
-25
25
75
125
175
(°C)
-25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continous drain current as a
function of ambient temperature
©
PXP400-100QS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 May 2020
3 / 14
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