Nexperia
PXP400-100QS
100 V, P-channel Trench MOSFET
aaa-031140
-10
t
t
= 10 µs
p
p
Limit R
= V /I
DS
I
DSon
D
D
(A)
= 100 µs
-1
-1
.-10
t
t
= 1 ms
p
p
2
DC; T
= 25 °C; drain mounting pad 6 cm
amb
= 10 ms
-2
-10
DC; T = 25 °C
sp
t
= 100 ms
p
-3
-10
-4
-10
-1
2
3
-10
-1
-10
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PXP400-100QS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 May 2020
4 / 14
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