Nexperia
PXP400-100QS
100 V, P-channel Trench MOSFET
aaa-031151
-10
V
GS
(V)
V
DS
-8
-6
-4
-2
0
I
D
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
aaa-030347
0
2
4
6
8
10
(nC)
Q
G
ID = -1.15 A; VDS = -50 V; Tj = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-031152
-1.5
I
S
(A)
-1.0
T = 150 °C
j
-0.5
T = 25 °C
j
0
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
PXP400-100QS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
7 May 2020
9 / 14
NEXPERIA [ Nexperia ]
