PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in
LFPAK56 using NextPowerS3 Technology
27 April 2016
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETS with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
100% Avalanche tested at I(AS) = 190 A
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Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery
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Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
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Wave solderable; exposed leads for optimal visual solder inspection
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3. Applications
On-board DC:DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
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Power OR-ing
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
25
Unit
V
VDS
ID
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
[1]
300
A
NEXPERIA [ Nexperia ]
