Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Ptot
Parameter
Conditions
Min
-
Typ
Max
238
175
Unit
W
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
-
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
-
0.96
0.72
1.2
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
0.85
Dynamic characteristics
QG(tot) total gate charge
ID = 25 A; VDS = 12 V; VGS = 10 V;
Fig. 12; Fig. 13
-
-
89.8
41.5
-
-
nC
nC
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V; VGS = 0 V
-
-
47.2
9.9
-
-
nC
nC
QGD
gate-drain charge
ID = 25 A; VDS = 12 V; VGS = 4.5 V;
Fig. 12; Fig. 13
Source-drain diode
softness factor
S
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 12 V; Fig. 16
-
0.8
-
[1] 300A continuous current has been successfully demonstrated during application tests. Practically the
current will be limited by PCB thermal design and operating temperature.
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
S
S
S
G
D
source
source
source
gate
2
G
3
mbb076
4
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN0R9-25YLD
LFPAK56;
Plastic single-ended surface-mounted package
(LFPAK56; Power-SO8); 4 leads
SOT669
Power-SO8
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
2 / 13
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