Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN0R9-25YLD
0D925L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
25
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C
-
VDGR
VGS
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
25
V
-20
20
V
Ptot
Tmb = 25 °C; Fig. 1
-
238
300
285
1614
175
175
260
-
W
A
ID
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1]
-
-
A
IDM
peak drain current
-
A
Tstg
Tj
storage temperature
junction temperature
peak soldering temperature
-55
-55
-
°C
°C
°C
V
Tsld(M)
VESD
Source-drain diode
electrostatic discharge voltage HBM
2000
IS
source current
peak source current
Tmb = 25 °C
-
-
198
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1614
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
ID = 25 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 8.2 ms
[2]
-
-
3343 mJ
avalanche energy
IAS
non-repetitive avalanche
current
Vsup ≤ 25 V; VGS = 10 V; Tj(init) = 25 °C; [2]
RGS = 50 Ω
190
A
[1] 300A continuous current has been successfully demonstrated during application tests. Practically the
current will be limited by PCB thermal design and operating temperature.
[2] Protected by 100% test
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PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
3 / 13
NEXPERIA [ Nexperia ]
