Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
aaa-022470
aaa-022471
200
10
I
R
DSon
(mΩ)
D
2.8 V
(A)
8
6
4
2
0
150
100
50
3 V
3.5 V
175°C
T = 25°C
j
V
GS
= 10 V 4.5 V
0
0
0.5
1
1.5
2
2.5
3
3.5
(V)
4
0
20
40
60
I (A)
D
80
V
GS
VDS = 12 V
Tj = 25 °C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-021697
aaa-022473
2
10
a
V
GS
(V)
10 V
1.6
8
6
4
2
0
1.2
0.8
0.4
0
V
GS
= 4.5 V
20 V
12 V
V
= 5 V
DS
-60 -30
0
30
60
90 120 150 180
T (°C)
0
20
40
60
80
(nC)
G
100
Q
j
Tj = 25 °C; ID = 25 A
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
8 / 13
NEXPERIA [ Nexperia ]
