Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Fig. 5
Min
Typ
50
Max
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
-
-
-
-
Fig. 6
125
aaa-020587
1
Z
th(j-mb)
(K/W)
δ = 0.5
0.2
-1
10
0.1
0.05
0.02
single shot
t
p
-2
P
10
10
δ =
T
t
t
p
T
-3
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-005750
aaa-005751
Fig. 5. PCB layout for thermal resistance junction to
ambient 1” square pad; FR4 Board; 2oz copper
Fig. 6. PCB layout for thermal resistance junction to
ambient minimum footprint; FR4 Board; 2oz
copper
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
25
-
-
V
V
V
22.5
1.2
-
-
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C
voltage
1.73
2.2
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PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
5 / 13
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