Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
03aa16
aaa-022466
120
500
400
300
200
100
0
I
D
(A)
P
der
(%)
80
(1)
40
0
0
25
50
75 100 125 150 175 200
0
50
100
150
200
T
(°C)
T
(°C)
mb
mb
VGS ≥ 10 V
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
(1) 300A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB thermal design
and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-022467
4
10
I
D
(A)
Limit R
= V / I
DS D
DSon
3
2
10
t
= 10 us
p
100 us
10
1 ms
10
DC
10 ms
100 ms
1
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
0.63
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.56
K/W
©
PSMN0R9-25YLD
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
4 / 13
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