Nexperia
PSMN0R9-25YLD
N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD source-drain voltage
trr
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
-
-
-
0.78
44
1.2
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
-
ns
nC
ns
VDS = 12 V; Fig. 16
recovered charge
Qr
ta
[1]
54.4
24.2
reverse recovery rise
time
tb
S
reverse recovery fall
time
-
-
19.8
0.8
-
-
ns
softness factor
[1] includes capacitive recovery
aaa-022468
aaa-022469
200
150
100
50
20
R
DSon
I
D
3.5 V
4.5 V
(A)
(mΩ)
V
GS
= 3 V
10 V
15
10
5
2.8 V
2.6 V
0
0
0
1
2
3
DS
4
0
2
4
6
8
10
12
V
GS
14
(V)
16
V
(V)
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PSMN0R9-25YLD
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Nexperia B.V. 2017. All rights reserved
Product data sheet
27 April 2016
7 / 13
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