Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
aaa-021201
aaa-021203
1.2
1.2
V
BE
(V)
V
BEsat
(V)
0.8
0.8
0.4
0
(1)
(1)
(2)
(3)
(2)
(3)
0.4
0
10
-1
2
3
4
-1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 8. TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
Fig. 9. TR1 (NPN): Base-emitter saturation voltage as a
function of collector current; typical values
aaa-021204
aaa-021206
1
1
V
CEsat
(V)
V
CEsat
(V)
-1
10
10
10
(1)
(2)
-1
10
-2
(1)
(2)
(3)
(3)
-2
-3
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb =100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 10. TR1 (NPN): Collector-emitter saturation voltage Fig. 11. TR1 (NPN): Collector-emitter saturation voltage
as a function of collector current; typical values as a function of collector current; typical values
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PBSS4260PANPS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
10 / 21
NEXPERIA [ Nexperia ]
