Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
Symbol
Parameter
Conditions
Min
Typ
180
625
140
Max
Unit
ns
tf
fall time
-
-
-
-
-
-
toff
fT
turn-off time
transition frequency
ns
VCE = 10 V; IC = 500 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
6.5
-
pF
TR2 (PNP)
ICBO
collector-base cut-off
current
VCB = -48 V; IE = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-100
-50
nA
µA
nA
ICES
IEBO
hFE
collector-emitter cut-off VCE = -48 V; VBE = 0 V; Tamb = 25 °C
current
-100
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
-
nA
DC current gain
VCE = -2 V; IC = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
170
250
VCE = -2 V; IC = -500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
140
200
150
75
-
VCE = -2 V; IC = -1 A; pulsed;
110
-
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -2 A; pulsed;
50
-
-
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
IC = -0.5 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
-100
-200
-350
-
-140
-310
-500
310
mV
mV
mV
mΩ
V
saturation voltage
IC = -1 A; IB = -50 mA; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
RCEsat
collector-emitter
IC = -1 A; IB = -50 mA; pulsed;
-
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = -0.5 A; IB = -50 mA; pulsed;
-
-0.89 -1
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -1 A; IB = -50 mA; pulsed;
-
-0.93 -1.1
-1.14 -1.25
-0.77 -0.9
V
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
-
V
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBE
base-emitter voltage
IC = -0.5 A; VCE = -2 V; pulsed;
-
V
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
td
tr
delay time
rise time
IC = -1 A; IBon = -50 mA; IBoff = 50 mA;
Tamb = 25 °C
-
-
10
80
©
-
-
ns
ns
PBSS4260PANPS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
8 / 21
NEXPERIA [ Nexperia ]
