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PBSS4260PANPS 参数 Datasheet PDF下载

PBSS4260PANPS图片预览
型号: PBSS4260PANPS
PDF下载: 下载PDF文件 查看货源
内容描述: [60 V, 2 A NPN/PNP low VCEsat (BISS) double transistorProduction]
分类和应用:
文件页数/大小: 21 页 / 788 K
品牌: NEXPERIA [ Nexperia ]
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Nexperia  
PBSS4260PANPS  
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor  
aaa-020833  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.50  
2
10  
0.33  
0.20  
0.10  
10  
0.05  
0.02  
0.01  
0
1
-1  
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, 4-layer copper, standard footprint  
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-020834  
3
10  
Z
th(j-a)  
(K/W)  
2
duty cycle = 1  
0.75  
10  
0.50  
0.33  
0.20  
0.10  
10  
0.05  
0.02  
0.01  
0
1
-1  
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2  
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
PBSS4260PANPS  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
4 February 2016  
6 / 21  
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