Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
aaa-021197
aaa-021198
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
(1)
(2)
(3)
10
10
(1)
(2)
(3)
1
1
-1
-1
10
10
10
10
-2
-2
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 20. TR2 (PNP): Collector-emitter saturation
Fig. 21. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
resistance as a function of collector current;
typical values
©
PBSS4260PANPS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
13 / 21
NEXPERIA [ Nexperia ]
