Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
aaa-021193
aaa-021194
-1.2
-1.2
V
BE
(V)
V
BEsat
(V)
-0.8
-0.8
-0.4
0
(1)
(1)
(2)
(3)
(2)
(3)
-0.4
0
-1
-10
2
3
4
-1
-10
2
3
4
-1
-10
-10
-10
-10
(mA)
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 16. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig. 17. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
aaa-021195
aaa-021196
-1
-1
V
V
CEsat
CEsat
(V)
(V)
-1
-1
-10
-10
-10
(1)
(2)
(3)
-10
-10
-10
(1)
(2)
(3)
-2
-3
-2
-3
-1
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 18. TR2 (PNP): Collector-emitter saturation voltage Fig. 19. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values as a function of collector current; typical values
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PBSS4260PANPS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
12 / 21
NEXPERIA [ Nexperia ]
