Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
aaa-021207
aaa-021208
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
(1)
(2)
(3)
2
10
10
10
1
1
(1)
(2)
(3)
-1
10
10
-1
-2
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig. 13. TR1 (NPN): Collector-emitter saturation
resistance as a function of collector current;
typical values
aaa-021191
aaa-021192
-3
600
I
B
(mA) = -70
-49
-63
-56
I
h
C
FE
-42
-35
-28
(A)
(1)
-2
-1
0
400
-21
-14
(2)
-7
200
(3)
0
-10
-1
2
3
4
-1
-10
-10
-10
-10
(mA)
0
-1
-2
-3
-4
-5
I
C
V
(V)
CE
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 15. TR2 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig. 14. TR2 (PNP): DC current gain as a function of
collector current; typical values
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PBSS4260PANPS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
11 / 21
NEXPERIA [ Nexperia ]
