Nexperia
PBSS4260PANPS
60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (NPN)
ICBO
collector-base cut-off
current
VCB = 48 V; IE = 0 A; Tamb = 25 °C
VCB = 48 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
100
50
nA
µA
nA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C
current
100
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
-
nA
DC current gain
VCE = 2 V; IC = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
250
400
VCE = 2 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
210
330
190
80
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
120
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02
50
-
-
VCEsat
collector-emitter
IC = 0.5 A; IB = 50 mA; pulsed;
70
100
200
350
200
1
mV
mV
mV
mΩ
V
saturation voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 50 mA; pulsed;
-
140
260
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 2 A; IB = 200 mA; pulsed;
-
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
RCEsat
collector-emitter
IC = 1 A; IB = 50 mA; pulsed;
-
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 0.5 A; IB = 50 mA; pulsed;
-
0.92
0.96
1.18
0.77
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = 1 A; IB = 50 mA; pulsed;
-
1.1
1.3
0.9
V
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 2 A; IB = 200 mA; pulsed;
-
V
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBE
base-emitter voltage
IC = 0.5 A; VCE = 2 V; pulsed;
-
V
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
td
tr
delay time
rise time
IC = 1 A; IBon = 50 mA; IBoff = -50 mA;
Tamb = 25 °C
-
-
-
-
10
-
-
-
-
ns
ns
ns
ns
140
150
445
ton
ts
turn-on time
storage time
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PBSS4260PANPS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
4 February 2016
7 / 21
NEXPERIA [ Nexperia ]
