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V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
Data Mask Function  
The DDR SDRAM has a Data Mask function that is used in conjunction with the Write cycle, but not the  
Read cycle. When the Data Mask is activated (DM high) during a Write operation, the Write is blocked (Mask  
to Data Latency = 0).  
When issued, the Data Mask must be referenced to both the rising and falling edges of Data Strobe.  
Data Mask Timing  
(CAS Latency = Any; Burst Length = 8)  
T9  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK, CK  
Write  
NOP  
NOP  
NOP  
NOP  
NOP  
tDMDQSS  
NOP  
NOP  
Command  
tDMDQSS  
DQS  
DQ  
tDMDQSH  
D1 D2 D3 D4 D5 D6 D7  
tDMDQSH  
D0  
DM  
Burst Interruption  
Read Interrupted by a Read  
A Burst Read can be interrupted before completion of the burst by issuing a new Read command to any  
bank. When the previous burst is interrupted, the remaining addresses are overridden with a full burst length  
starting with the new address. The data from the first Read command continues to appear on the outputs until  
the CAS latency from the interrupting Read command is satisfied. At this point, the data from the interrupting  
Read command appears on the bus. Read commands can be issued on each rising edge of the system clock.  
It is illegal to interrupt a Read with autoprecharge command with a Read command.  
Read Interrupted by a Read Command Timing  
(CAS Latency = 2; Burst Length = 4)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
CK, CK  
Command  
DQS  
ReadA  
ReadB  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
DA0 DA1 DB0 DB1 DB2 DB3  
DQ  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
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