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V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
Write Interrupted by a Read  
A Burst Write can be interrupted by a Read command to any bank. If a burst write operation is interrupted  
prior to the end of the burst operation, then the last two pieces of input data prior to the Read command must  
be masked off with the data mask (DM) input pin to prevent invalid data from being written into the memory  
array. Any data that is present on the DQ pins coincident with or following the Read command will be masked  
off by the Read command and will not be written to the array. The memory controller must give up control of  
both the DQ bus and the DQS bus at least one clock cycle before the read data appears on the outputs in  
order to avoid contention. In order to avoid data contention within the device, a delay is required (tCDLR) from  
the last valid data input before a Read command can be issued to the device. It is illegal to interrupt a Write  
with autoprecharge command with a Read command.  
Write Interrupted by a Read Command Timing  
(CAS Latency = 2; Burst Length = 8)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
CK, CK  
Command  
DQS  
Write  
NOP  
NOP  
Read  
NOP  
NOP  
D
NOP  
NOP  
NOP  
NOP  
NOP  
t
WTR  
D
D
D
D
D
D
D
D
D
D
D
D
D
7
DQ  
0
1
2
3
4
5
0
1
2
3
4
5
6
DM  
Data is masked  
by DM input  
Data is masked  
by Read command  
DQS input ignored  
Auto Refresh  
The Auto Refresh command is issued by having CS, RAS, and CAS held low with CKE and WE high at the  
rising edge of the clock. All banks must be precharged and idle for a tRP(min) before the Auto Refresh com-  
mand is applied. No control of the address pins is required once this cycle has started because of the internal  
address counter. When the Auto Refresh cycle has completed, all banks will be in the idle state. A delay be-  
tween the Auto Refresh command and the next Activate command or subsequent Auto Refresh command  
must be greater than or equal to the tRFC(min). Commands may not be issued to the device once an Auto  
Refresh cycle has begun. CS input must remain high during the refresh period or NOP commands must be  
registered on each rising edge of the CK input until the refresh period is satisfied.  
Auto Refresh Timing  
T0  
T1  
T2  
tRP  
T3  
T4  
T5  
T6  
T7  
tRFC  
T8  
T9  
T10  
T11  
CK, CK  
Pre All  
Auto Ref  
NOP  
NOP  
NOP  
ANY  
Command  
High  
CKE  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
23  
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