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V58C2128804S 参数 Datasheet PDF下载

V58C2128804S图片预览
型号: V58C2128804S
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能2.5伏128兆位的DDR SDRAM [HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 59 页 / 922 K
品牌: MOSEL [ MOSEL VITELIC, CORP ]
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V58C2128(804/404/164)S  
Read Interrupted by a Precharge  
A Burst Read operation can be interrupted by a precharge of the same bank. The Precharge command to  
Output Disable latency is equivalent to the CAS latency.  
Read Interrupted by a Precharge Timing  
(CAS Latency = 2, 2.5, 3; Burst Length = 8)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
tRAS(min)  
tRP(min)  
CK, CK  
BA  
NOP  
NOP  
Read  
NOP  
PreA  
NOP  
BA  
NOP  
NOP  
Command  
DQS  
DQ  
D0  
D1 D2 D3  
CAS Latency=2  
DQS  
DQ  
D0  
D1 D2 D3  
CAS Latency=2.5  
Burst Write Operation  
The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising  
edge of the clock. The address inputs determine the starting column address. The memory controller is re-  
quired to provide an input data strobe (DQS) to the DDR SDRAM to strobe or latch the input data (DQ) and  
data mask (DM) into the device. During Write cycles, the data strobe applied to the DDR SDRAM is required  
to be nominally centered within the data (DQ) and data mask (DM) valid windows. The data strobe must be  
driven high nominally one clock after the write command has been registered. Timing parameters tDQSS(min)  
and tDQSS(max) define the allowable window when the data strobe must be driven high.  
Input data for the first Burst Write cycle must be applied one clock cycle after the Write command is  
registered into the device (WL=1). The input data valid window is nominally centered around the midpoint of  
the data strobe signal. The data window is defined by DQ to DQS setup time (tQDQSS) and DQ to DQS hold  
time (tQDQSH). All data inputs must be supplied on each rising and falling edge of the data strobe until the burst  
length is completed. When the burst has finished, any additional data supplied to the DQ pins will be ignored.  
Write Preamble and Postamble Operation  
Prior to a burst of write data and given that the controller is not currently in burst write mode, the data strobe  
signal (DQS), must transition from Hi-Z to a valid logic low. This is referred to as the data strobe “write preamble”.  
This transition from Hi-Z to logic low nominally happens on the falling edge of the clock after the write com-  
mand has been registered by the device. The preamble is explicitly defined by a setup time (tWPRES(min)) and  
hold time (tWPREH(min)) referenced to the first falling edge of CK after the write command.  
V58C2128(804/404/164)S Rev. 1.6 March 2002  
17  
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