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MT54W1MH36BF-5 参数 Datasheet PDF下载

MT54W1MH36BF-5图片预览
型号: MT54W1MH36BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 36MB QDR⑩II SRAM 2字突发 [36Mb QDR⑩II SRAM 2-WORD BURST]
分类和应用: 静态存储器
文件页数/大小: 27 页 / 522 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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ADVANCE  
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36  
1.8V VDD, HSTL, QDRIIb2 SRAM  
FBGA BALL DESCRIPTIONS  
SYMBOL  
TYPE  
DESCRIPTION  
SA  
Input  
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold  
times around the rising edge of K for READ cycles and K# for WRITE cycles. See Ball  
Assignment figures for address expansion inputs. All transactions operate on a burst of two  
words (one clock period of bus activity). These inputs are ignored when both ports are  
deselected.  
R#  
Input  
Input  
Input  
Synchronous Read: When LOW, this input causes the address inputs to be registered and a  
READ cycle to be initiated. This input must meet setup and hold times around the rising edge  
of K.  
W#  
Synchronous Write: When LOW, this input causes the address inputs to be registered and a  
WRITE cycle to be initiated. This input must meet setup and hold times around the rising  
edge of K.  
BW_#  
NW_#  
Synchronous Byte Writes (or Nibble Writes on the x8): When LOW, these inputs cause their  
respective Bytes to be registered and written if W# had initiated a WRITE cycle. These signals  
must meet setup and hold times around the rising edges of K and K# for each of the two  
rising edges comprising the WRITE cycle. See Ball Assignment figures for signal to data  
relationships.  
K
K#  
Input  
Input  
Input Clock: This input clock pair registers address and control inputs on the rising edge of K,  
and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180 degrees  
out of phase with K. All synchronous inputs must meet setup and hold times around the clock  
rising edges.  
C
C#  
Output Clock: This clock pair provides a user-controlled means of tuning device output data.  
The rising edge of C is used as the output timing reference for second output data. The rising  
edge of C# is used as the output reference for first output data. Ideally, C# is 180 degrees out  
of phase with C. C and C# may be tied HIGH to force the use of K and K# as the output  
reference clocks instead of having to provide C and C# clocks. If tied HIGH, these inputs may  
not be allowed to toggle during device operation.  
TMS  
TDI  
Input  
Input  
Input  
Input  
IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left as No Connects if the JTAG  
function is not used in the circuit.  
TCK  
VREF  
ZQ  
IEEE 1149.1 Clock Input: 1.8V I/O levels. This ball must be tied to VSS if the JTAG function is not  
used in the circuit.  
HSTL Input Reference Voltage: Nominally VDDQ/2, but may be adjusted to improve system  
noise margin. Provides a reference voltage for the HSTL input buffer trip point.  
Output Impedance Matching Input: This input is used to tune the device outputs to the  
system data bus impedance. DQ output impedance is set to 0.2 x RQ, where RQ is a resistor  
from this ball to ground. Alternately, this ball can be connected directly to VDDQ to enable  
the minimum impedance mode. This ball cannot be connected directly to GND or left  
unconnected.  
DLL#  
D_  
Input  
Input  
DLL Disable: When LOW, this input causes the DLL to be bypassed for stable, low-frequency  
operation.  
Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges  
of K and K# during WRITE operations. See Ball Assignment figures for ball site location of  
individual signals. The x8 device uses D0-D7. Remaining signals are NC. The x9 device uses D0-  
D8. Remaining signals are NC. The x18 device uses D0–D17. Remaining signals are NC. The x36  
device uses D0–D35. Remaining signals are NC.  
CQ#, CQ  
TDO  
Output  
Output  
Synchronous Echo Clock Outputs: The edges of these outputs are tightly matched to the  
synchronous data outputs and can be used as data valid indication. These signals run freely  
and do not stop when Q tri-states.  
IEEE 1149.1 Test Output: 1.8V I/0 level.  
36Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM  
MT54W2MH18B_A.fm - Rev 9/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
9
©2002, Micron Technology Inc.  
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