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MT54W1MH36BF-5 参数 Datasheet PDF下载

MT54W1MH36BF-5图片预览
型号: MT54W1MH36BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 36MB QDR⑩II SRAM 2字突发 [36Mb QDR⑩II SRAM 2-WORD BURST]
分类和应用: 静态存储器
文件页数/大小: 27 页 / 522 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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ADVANCE  
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36  
1.8V VDD, HSTL, QDRIIb2 SRAM  
Figure 4  
Bus Cycle State Diagram  
RD  
RD  
LOAD NEW  
/RD  
READ DOUBLE  
READ PORT NOP  
R_Init=0  
READ ADDRESS  
always  
Supply voltage  
provided  
/RD  
POWER-UP  
WT  
Supply voltage  
provided  
WT  
LOAD NEW  
WRITE ADDRESS  
AT K#  
/WT  
WRITE PORT NOP  
WRITE DOUBLE  
AT K#↑  
always  
/WT  
NOTE:  
1. The address is concatenated with one additional internal LSB to facilitate burst operation. The address order is always fixed as xxx .  
. . xxx + 0, xxx . . . xxx + 1. Bus cycle is terminated at the end of this sequence (burst count = 2).  
2. State transitions: RD = (R# = LOW); WT = (W# = LOW).  
3. Read and write state machines can be simultaneously active.  
4. State machine control timing sequence is controlled by K.  
36Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM  
MT54W2MH18B_A.fm - Rev 9/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology Inc.  
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