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MT54W1MH36BF-5 参数 Datasheet PDF下载

MT54W1MH36BF-5图片预览
型号: MT54W1MH36BF-5
PDF下载: 下载PDF文件 查看货源
内容描述: 36MB QDR⑩II SRAM 2字突发 [36Mb QDR⑩II SRAM 2-WORD BURST]
分类和应用: 静态存储器
文件页数/大小: 27 页 / 522 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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ADVANCE  
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36  
1.8V VDD, HSTL, QDRIIb2 SRAM  
FBGA BALL DESCRIPTIONS (continued)  
SYMBOL  
TYPE  
DESCRIPTION  
Q_  
Output  
Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K  
and K# rising edges if C and C# are tied HIGH. This bus operates in response to R# commands.  
See Ball Assignment figures for ball site location of individual signals. The x8 device uses D0-  
D7. The x9 device uses D0-D8. The x18 device uses Q0–Q17. Remaining signals are NC. The x36  
device uses Q0–Q35. Remaining signals are NC.  
VDD  
Supply  
Supply  
Power Supply: 1.8V nominal. See DC Electrical Characteristics and Operating Conditions for  
range.  
VDDQ  
Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC  
Electrical Characteristics and Operating Conditions for range.  
VSS  
NC  
Supply  
Power Supply: GND.  
No Connect: These signals are not internally connected and may be connected to ground to  
improve package heat dissipation.  
36Mb: 1.8V VDD, HSTL, QDRIIb2 SRAM  
MT54W2MH18B_A.fm - Rev 9/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
10  
©2002, Micron Technology Inc.  
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