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MT48LC8M8A2 参数 Datasheet PDF下载

MT48LC8M8A2图片预览
型号: MT48LC8M8A2
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM [SYNCHRONOUS DRAM]
分类和应用: 动态存储器
文件页数/大小: 55 页 / 1456 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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64Mb : x4, x8, x16  
SDRAM  
CLOCK SUSPEND  
The clock suspend m ode occurs when a colum n ac-  
cess/ burst is in progress and CKE is registered LOW. In  
the clock suspend m ode, the internal clock is deacti-  
vated, “freezing” the synchronous logic.  
Clock suspend m ode is exited by registering CKE  
HIGH; the internal clock and related operation will re-  
sum e on the subsequent positive clock edge.  
For each p ositive clock edge on wh ich CKE is  
sam pled LOW, the next internal positive clock edge is  
suspended. Any com m and or data present on the in-  
put pins at the tim e of a suspended internal clock edge  
is ignored; any data present on the DQ pins rem ains  
driven; and burst counters are not increm ented, as  
lon g as th e clock is su sp en ded. (See exam p les in  
Figures 22 and 23.)  
BURST READ/SINGLE WRITE  
The burst read/ single write m ode is entered by pro-  
gram m ing the write burst m ode bit (M9) in the m ode  
register to a logic 1. In this m ode, all WRITE com m ands  
result in the access of a single colum n location (burst of  
one), regardless of the program m ed burst length. READ  
com m an ds access colu m n s accordin g to th e p ro-  
gram m ed burst length and sequence, just as in the  
norm al m ode of operation (M9 = 0).  
Fig u re 22  
Fig u re 23  
Clo ck Su sp e n d Du rin g WRITE Bu rst  
Clo ck Su sp e n d Du rin g READ Bu rst  
T0  
T1  
T2  
T3  
T4  
T5  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
CLK  
CKE  
CLK  
CKE  
INTERNAL  
CLOCK  
INTERNAL  
CLOCK  
NOP  
WRITE  
NOP  
NOP  
COMMAND  
ADDRESS  
READ  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
ADDRESS  
DQ  
BANK,  
COL n  
BANK,  
COL n  
DIN  
DIN  
DIN  
n + 2  
DIN  
D
OUT  
D
n
OUT  
D
n
OUT  
D
n
OUT  
n
n
+ 1  
n
+ 1  
+ 2  
+ 3  
TRANSITIONING DATA  
DON’T CARE  
TRANSITIONING DATA  
DON’T CARE  
NOTE: For this example, CAS latency = 2, burst length = 4 or greater, and  
DQM is LOW.  
64Mb: x4, x8, x16 SDRAM  
64MSDRAM_F.p65 – Rev. F; Pub. 1/03  
Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.  
©2003, Micron Technology, Inc.  
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