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MT41J256M4 参数 Datasheet PDF下载

MT41J256M4图片预览
型号: MT41J256M4
PDF下载: 下载PDF文件 查看货源
内容描述: DDR3 SDRAM MT41J256M4 â ????梅格32 ×4× 8银行MT41J128M8 â ????梅格16 ×8× 8银行MT41J64M16 â ???? 8梅格×16× 8银行 [DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 banks MT41J128M8 – 16 Meg x 8 x 8 banks MT41J64M16 – 8 Meg x 16 x 8 banks]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 214 页 / 2938 K
品牌: MICRON [ MICRON TECHNOLOGY ]
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1Gb: x4, x8, x16 DDR3 SDRAM  
Commands  
PRECHARGE  
The PRECHARGE command is used to de-activate the open row in a particular bank or  
in all banks. The bank(s) are available for a subsequent row access a specified time (tRP)  
after the PRECHARGE command is issued, except in the case of concurrent auto pre-  
charge. A READ or WRITE command to a different bank is allowed during a concurrent  
auto precharge as long as it does not interrupt the data transfer in the current bank and  
does not violate any other timing parameters. Input A1± determines whether one or all  
banks are precharged. In the case where only one bank is precharged, inputs BA[2:±] se-  
lect the bank; otherwise, BA[2:±] are treated as “Don’t Care.”  
After a bank is precharged, it is in the idle state and must be activated prior to any READ  
or WRITE commands being issued to that bank. A PRECHARGE command is treated as  
a NOP if there is no open row in that bank (idle state) or if the previously open row is  
already in the process of precharging. However, the precharge period is determined by  
the last PRECHARGE command issued to the bank.  
REFRESH  
The REFRESH command is used during normal operation of the DRAM and is analo-  
gous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersis-  
tent, so it must be issued each time a refresh is required. The addressing is generated by  
the internal refresh controller. This makes the address bits a “Don’t Care” during a RE-  
FRESH command. The DRAM requires REFRESH cycles at an average interval of 0.8μs  
(maximum when TC 85°C or 3.9μs maximum when TC 95°C). The REFRESH period  
begins when the REFRESH command is registered and ends tRFC (MIN) later.  
To allow for improved efficiency in scheduling and switching between tasks, some flexi-  
bility in the absolute refresh interval is provided. A maximum of eight REFRESH com-  
mands can be posted to any given DRAM, meaning that the maximum absolute interval  
between any REFRESH command and the next REFRESH command is nine times the  
maximum average interval refresh rate. Self refresh may be entered with up to eight RE-  
FRESH commands being posted. After exiting self refresh (when entered with posted  
REFRESH commands), additional posting of REFRESH commands is allowed to the ex-  
tent that the maximum number of cumulative posted REFRESH commands (both pre-  
and post-self refresh) does not exceed eight REFRESH commands.  
At any given time, a maximum of 16 REFRESH commands can be issued within  
2 x tREFI.  
PDF: 09005aef826aa906  
1Gb_DDR3_SDRAM.pdf - Rev. L 03/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
121  
‹ 2006 Micron Technology, Inc. All rights reserved.  
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