W3H128M72E-XSBX / W3H128M72E-XNBX
BGA THERMAL
Junction to Board Matrix (JB)
Junction to Case Matrix (JC)
11.23 10.34
9.86
9.55
9.37
16.53 13.70 11.26
13.76 15.25 12.41
9.01
9.87
6.92
7.56
8.33
10.42 13.91 13.09 12.59 12.32
9.96
9.65
9.46
13.07 16.66 15.87 15.46
12.56 15.85 19.51 18.87
12.27 15.40 18.80 22.71
11.31 12.38 13.84 10.91
9.04
6.94
9.85
7.53
10.89 12.26 9.29
8.73
9.24 10.59
SIMULATION CONDITIONS AND NOTES:
The JEDEC JESD51 specifications are used as the default modeling environment and boundary conditions. Using still air, horizontal mounting and the 2s2p board. Published material properties are used as input
to derive the thermal characteristics of the module. Your application conditions will most likely differ from the JESD51 2s2p board definition specifications; therefore, Mercury Systems recommends a customized
evaluation of thermal resistances based on the actual conditions in thermally-challenged situations. Delphi models are available for most products upon request. Refer to Mercury Systems Application Note AN0061
for matrix use.
INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
VIH(DC)
VIL(DC)
Min
VREF + 0.1 25
-0.300
Max
Unit
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
VCCQ + 0.300
VREF - 0.125
V
V
INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Parameter
Symbol
VIH(AC)
VIH(AC)
VIL(AC)
VIL(AC)
Min
Max
—
Unit
AC Input High (Logic 1) Voltage DDR2-400 & DDR2-533
AC Input High (Logic 1) Voltage DDR2-667
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
AC Input Low (Logic 0) Voltage DDR2-667
VREF + 0.250
V
V
V
V
VREF + 0.200
—
—
—
VREF - 0.250
VREF - 0.200
ODT DC ELECTRICAL CHARACTERISTICS
All voltages referenced to VSS
Parameter
Symbol
RTT1(EFF)
RTT2(EFF)
RTT3(EFF)
∆VM
Min
52
Nom
75
Max
97
Unit
Ω
Notes
RTT effective impedance value for 75Ω setting EMR (A6, A2) = 0, 1
1
1
1
2
R
TT effective impedance value for 150Ω setting EMR (A6, A2) = 1, 0
TT effective impedance value for 50Ω setting EMR (A6, A2) = 1, 1
105
35
150
50
195
65
Ω
R
Ω
Deviation of VM with respect to VCCQ/2
-6
6
%
NOTE: 1. RTT1(EFF) and RTT2(EFF) are determined by separately applying VIH(AC) and VIL (AC) to the ball being tested, and then measuring current, I(VIH(AC)), and I(VIL(AC)), respectively.
RTT(EFF)
=
VIH(AC) - VIL(AC)
I(VIH(AC)) - I(VIL(AC)
)
2. Measure voltage (VM) at tested ball with no load
∆VM =
(
2 x VM - 1
VCC
)
x 100
21
4163.12E-0716-ss-W3H128M72E-XSBX / XNBX
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
MERCURY [ MERCURY UNITED ELECTRONICS INC ]
