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W3H128M72E-400NBM 参数 Datasheet PDF下载

W3H128M72E-400NBM图片预览
型号: W3H128M72E-400NBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX72, 1.35ns, CMOS, PBGA208, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 31 页 / 1024 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H128M72E-XSBX / W3H128M72E-XNBX  
DDR2 ICC SPECIFICATIONS AND CONDITIONS  
667  
CL6  
533  
CL5  
400  
CL4  
Symbol  
Proposed Conditions  
Units  
Operating one bank active-precharge current;  
CK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus  
inputs are SWITCHING; Data bus inputs are SWITCHING  
ICC0  
t
675  
800  
55  
575  
675  
55  
575  
675  
55  
mA  
Operating one bank active-read-precharge current;  
ICC1  
ICC2P  
ICC2Q  
ICC2N  
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD = tRCD(ICC); CKE is  
mA  
mA  
mA  
mA  
HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDAD6W  
Precharge power-down current;  
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are  
FLOATING  
Precharge quiet standby current;  
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE; Data  
bus inputs are FLOATING  
325  
350  
225  
300  
200  
250  
Precharge standby current;  
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
Active power-down current;  
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address bus  
inputs are STABLE; Data bus inputs are FLOATING  
Fast PDN Exit MRS(12) = 0  
Slow PDN Exit MRS(12) = 1  
200  
50  
175  
50  
150  
50  
mA  
mA  
ICC3P  
Active standby current;  
ICC3N  
All banks open; tCK = tCK(ICC), tRAS = tRASMAX(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid  
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
375  
275  
950  
250  
800  
mA  
mA  
Operating burst write current;  
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASMAX(ICC), tRP = tRP(ICC);  
CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are  
SWITCHING  
ICC4W  
1,250  
Operating burst read current;  
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASMAX(ICC),  
tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data  
pattern is same as IDAD6W  
ICC4R  
1,375  
975  
900  
mA  
Burst auto refresh current;  
ICC5  
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid commands;  
Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
1,400  
45  
1,300  
45  
1,250  
45  
mA  
mA  
Self refresh current;  
ICC6  
CK and CK# at 0V; CKE 0.2V; Other control and address bus inputs  
are FLOATING; Data bus inputs are FLOATING  
Normal  
Operating bank interleave read current;  
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC = tRC(ICC),  
RRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs  
ICC7  
t
1,975  
1,775  
1,775  
mA  
are STABLE during DESELECTs; Data pattern is same as IDAD6R; Refer to the following page for detailed timing  
conditions  
22  
4163.12E-0716-ss-W3H128M72E-XSBX / XNBX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com  
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