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W3H128M72E-400NBM 参数 Datasheet PDF下载

W3H128M72E-400NBM图片预览
型号: W3H128M72E-400NBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX72, 1.35ns, CMOS, PBGA208, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 31 页 / 1024 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H128M72E-XSBX / W3H128M72E-XNBX  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCC  
Parameter  
Min  
Max  
2.3  
2.3  
2.3  
125  
25  
Unit  
V
Notes  
Voltage on VCC pin relative to VSS  
-1.0  
-0.5  
-0.5  
-55  
-25  
-5  
1
1, 2  
3
VCCQ  
VIN, VOUT  
TSTG  
Voltage on VCCQ pin relative to VSS  
V
Voltage on any pin relative to VSS  
V
Storage temperature  
°C  
A  
A  
A  
IL  
Input leakage current; Any input 0V<VIN<VCC; ; Other pins not under test = 0V  
Output leakage current; 0V<VOUT<VCCQ; DQs and ODT are disabled  
VREF leakage current; VREF = Valid VREF level  
IOZ  
5
IVREF  
-10  
10  
NOTES:  
Stresses greater than those listed may cause permanent damage to the device. This is a stress  
rating only, and functional operation of the device at these or any other conditions outside those  
indicated in the operational sections of this specication is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
1.  
V
CC and VCCQ must be within 300mV of each other at all times; this is not required when power  
is ramping down.  
REF 0.6 x VCCQ; however, VREF may be VCCQ provided that VREF 300mV.  
2.  
V
3. Voltage on any I/O may not exceed voltage on VCCQ  
.
DC OPERATING CONDITIONS  
All voltages referenced to VSS  
Parameter  
Symbol  
VCC  
Min  
1 .7  
1 .7  
Typical  
1 .8  
Max  
1 .9  
Unit  
V
Notes  
Supply voltage  
1, 5  
4, 5  
2
I/O Supply voltage  
VCCQ  
VREF  
VTT  
1 .8  
1 .9  
V
I/O Reference voltage  
I/O Termination voltage  
Operating Junction Temp. (Mil.)  
Operating Junction Temp. (Ind.)  
Operating Junction Temp. (Com.)  
NOTES:  
0.49 x VCCQ  
0.50 x VCCQ  
VREF  
0.51 x VCCQ  
VREF + 0.04  
+125  
V
VREF - 0.04  
V
3
TJ  
-55  
-40  
0
°C  
°C  
°C  
TJ  
+85  
TJ  
+70  
1.  
2.  
V
V
CC and VCCQ must track each other. VCC and VCCQ are tied on this device.  
REF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ±1 percent of the DC value. Peak-to-peak AC noise  
on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.  
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF  
3.  
4. VCCQ tracks with VCC  
5. VSSQ = VSS  
INPUT/OUTPUT CAPACITANCE  
TA = 25°C, f = 1MHz  
Parameter  
Symbol  
CIN1  
Max  
24  
Unit  
pF  
Input capacitance (A0 - A12, BA0 - BA2 ,CS#, RAS#, CAS#, WE#, CKE, ODT)  
Input capacitance CK, CK#  
CIN2  
9.5  
pF  
Input capacitance DM  
CIN3  
10.5  
10.5  
pF  
I/O capacitance DQ0 - 71, DQS, DQS#  
COUT  
pF  
20  
4163.12E-0716-ss-W3H128M72E-XSBX / XNBX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com  
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