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W3H128M72E-400NBM 参数 Datasheet PDF下载

W3H128M72E-400NBM图片预览
型号: W3H128M72E-400NBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX72, 1.35ns, CMOS, PBGA208, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 31 页 / 1024 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H128M72E-XSBX / W3H128M72E-XNBX  
FIGURE 12 – WRITE COMMAND  
CK#  
CK  
CKE  
HIGH  
CS#  
RAS#  
CAS#  
WE#  
CA  
ADDRESS  
A10  
EN AP  
DIS AP  
BANK ADDRESS  
BA  
DON’T CARE  
NOTE: CA = column address; BA = bank address; EN AP = enable auto precharge; and DIS AP = disable auto precharge.  
TABLE 4 – WRITE USING CONCURRENT AUTO PRECHARGE  
Minimum Delay  
(With Concurrent Auto  
Precharge)  
From Command (Bank n)  
To Command (Bank m)  
Units  
READ OR READ w/AP  
WRITE or WRITE w/AP  
PRECHARGE or ACTIVATE  
(CL-1) + (BL/2) + tWTR  
tCK  
tCK  
tCK  
WRITE with Auto Precharge  
(BL/2)  
1
18  
4163.12E-0716-ss-W3H128M72E-XSBX / XNBX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com  
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