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IC42S16100E-6TL 参数 Datasheet PDF下载

IC42S16100E-6TL图片预览
型号: IC42S16100E-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E, IC42S16100E  
Interval Between Write and Read Commands  
Anew read command can be executed while a write cycle  
is in progress, i.e., before that cycle completes. Data  
corresponding to the new read command is output after  
the CAS latency has elapsed from the point the new read  
command was executed. The I/On pins must be placed in  
the HIGH impedance state at least one cycle before data  
is output during this operation.  
The interval (tc c d ) between command must be at least  
one clock cycle.  
The selected bank must be set to the active state before  
executing this command.  
CLK  
tCCD  
COMMAND  
DQ  
WRITE A0 READ B0  
DIN A0  
DOUT B0  
DOUT B1  
DOUT B2  
DOUT B3  
HI-Z  
WRITE (CA=A, BANK 0) READ (CA=B, BANK 0)  
CAS latency = 2, burstlength = 4  
CLK  
t
CCD  
COMMAND  
DQ  
WRITE A0 READ B0  
DIN A0  
DOUT B0  
DOUT B1  
DOUT B2  
DOUT B3  
HI-Z  
WRITE (CA=A, BANK 0) READ (CA=B, BANK 0)  
CAS latency = 3, burstlength = 4  
Integrated Silicon Solution, Inc. — www.issi.com  
29  
Rev. C  
01/22/08  
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