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IC42S16100E-6TL 参数 Datasheet PDF下载

IC42S16100E-6TL图片预览
型号: IC42S16100E-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 81 页 / 1082 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS42S16100E, IC42S16100E  
Burst Read  
The read cycle is started by executing the read command.  
The address provided during read command execution is  
usedasthestartingaddress.First,thedatacorrespondingto  
thisaddressisoutputinsynchronizationwiththeclocksignal  
after the CAS latency period. Next, data corresponding to  
anaddressgeneratedautomaticallybythedeviceisoutput  
in synchronization with the clock signal.  
isafullpageisanexception.Inthiscasetheoutputbuffers  
must be set to the high impedance state by executing a  
burst stop command.  
Note that upper byte and lower byte output data can  
be masked independently under control of the signals  
applied to the U/LDQM pins. The delay period (tq m d ) is  
fixed at two, regardless of the CAS latency setting, when  
this function is used.  
The output buffers go to the LOW impedance state CAS  
latencyminusonecycleafterthereadcommand,andgoto  
theHIGHimpedancestateautomaticallyafterthelastdata  
is output. However, the case where the burst length  
The selected bank must be set to the active state before  
executing this command.  
CLK  
COMMAND  
UDQM  
READ A0  
t
QMD=2  
LDQM  
DQ8-DQ15  
DQ0-DQ 7  
D
OUT A0  
D
OUT A2  
HI-Z  
DOUT A3  
HI-Z  
HI-Z  
DOUT A0  
D
OUT A1  
READ (CA=A, BANK 0)  
DATA MASK (LOWER BYTE)  
DATA MASK (UPPER BYTE)  
CAS latency = 3, burst length = 4  
Burst Write  
The write cycle is started by executing the command.  
The address provided during write command execution  
is used as the starting address, and at the same time,  
data for this address is input in synchronization with the  
clock signal.  
a burst stop command. The latency for DQ pin data input  
is zero, regardless of the CAS latency setting. However, a  
wait period (write recovery: td p l ) after the last data input is  
required for the device to complete the write operation.  
Note that the upper byte and lower byte input data can  
be masked independently under control of the signals  
applied to the U/LDQM pins. The delay period (td m d ) is  
fixed at zero, regardless of the CAS latency setting, when  
this function is used.  
Next, data is input in other in synchronization with the  
clock signal. During this operation, data is written to  
addressgeneratedautomaticallybythedevice.Thiscycle  
terminates automatically after a number of clock cycles  
determined by the stipulated burst length. However, the  
case where the burst length is a full page is an exception.  
Inthiscasethewritecyclemustbeterminatedbyexecuting  
The selected bank must be set to the active state before  
executing this command.  
CLK  
COMMAND  
DQ  
WRITE  
DIN  
0
DIN  
1
DIN  
2
DIN 3  
BURST LENGTH  
CAS latency = 2,3, burst length = 4  
Integrated Silicon Solution, Inc. — www.issi.com  
25  
Rev. C  
01/22/08  
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